Plasma-Enhanced Chemical Vapor Deposition (PECVD) is a chemical vapor deposition process used to deposit thin films from a gas state (vapor) to a solid state on a substrate. Chemical reactions are involved in the process, which occur after creation of a plasma of the reacting gases. The plasma is generally created by radio frequency (RF) frequency or direct current (DC) discharge. PECVD is commonly used to deposit dielectric films such as silicon nitride, silicon dioxide, and amorphous silicon at lower substrate temperatures compared to standard CVD methods.
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