Metal-Organic Chemical Vapor Deposition (MOCVD), also known as Metal-Organic Vapor Phase Epitaxy (MOVPE) or Organometallic Vapor Phase Epitaxy (OMVPE), is a chemical vapor deposition method for growing thin films, typically semiconductors, from the surface reaction of gaseous precursors containing organic compounds or metalorganics. It is widely used to produce high-quality thin films for electronic and optoelectronic devices, such as LEDs, lasers, and solar cells. MOCVD is particularly important for growing complex compound semiconductors like gallium nitride (GaN) and indium phosphide (InP).
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