What is MBE?

Molecular Beam Epitaxy (MBE) is an epitaxial growth technique in which beams of atoms or molecules are directed onto a crystalline substrate under ultra-high vacuum conditions. The atoms or molecules condense on the substrate, where they react and form a thin film. MBE is used extensively in the manufacture of semiconductor devices, including transistors and lasers, because it allows for precise control over the composition and thickness of the grown layers, enabling the creation of complex heterostructures with tailored electronic and optical properties. It is also used in research for creating novel materials and studying their properties.