Electron beam lithography (EBL) is a technique used to create extremely fine patterns on a substrate, often for semiconductor manufacturing. A focused beam of electrons is scanned across a surface coated with an electron-sensitive resist, exposing the desired pattern. The exposed resist is then selectively removed, leaving behind the pattern, which can then be etched or used for other fabrication processes. EBL is known for its high resolution capabilities, allowing for the creation of nanoscale features, although it is generally slower and more expensive than optical lithography methods for large-scale production.
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