What is e-beam lithography?

Electron-beam lithography (EBL) is a technique for creating extremely fine patterns on a substrate (usually a silicon wafer) using a focused beam of electrons. It is primarily used for fabricating photomasks for optical lithography, creating nanoscale devices, and in research and development. EBL offers high resolution but is slower than other lithography techniques like optical lithography, making it less suitable for high-volume manufacturing.